rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks , and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 10 r f fm8209 wifi front - end module 2.4ghz to 2.5ghz the RFFM8209 provides a complete front - end integrated solution in a single module for wifi 802.11g/n/ac and bluetooth systems. the ultra - small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. this simplifies the total front end solution by reducing the bill of m aterials, system footprint, and manufacturing c ost. the RFFM8209 integrates a power amplifier (pa), a low noise amplifier (lna) with bypass mode, a power detector coupler for improved accuracy, a nd a single pole 3 - throw ( sp3t ) switch. the device is provi ded in a 2.5mm x 2.5mm x 0.40mm 16 - pin qfn package. this module meets or exceeds the rf front end needs of ieee802.11b/g/n/ac wifi rf systems . tx pa_en gnd vcc ant bt gnd gnd rx 6 8 lna_en vcc gnd 13 c_bt 7 12 14 15 16 1 2 3 4 5 11 10 9 vcc pdet c_rx functional block diagram ordering information RFFM8209sb standard 5 - piece sample bag rf fm8209 sq standard 25 - piece sample bag rf fm8209 sr standard 100 - piece reel rf fm8209tr7 standard 2500 - piece reel rf fm8209 pck - 410 fully assembled evaluation board w/ 5 - piece bag package: q fn, 16 - pin, 2.5mm x 2.5 mm x 0.40mm features pout =18dbm 256qam 20mhz at 1.8% ( - 35db) dynamic evm , v cc = 3. 6 v p out = 20dbm 64qam 20mhz at 3.0% ( - 30. 5 db) dynamic evm , v cc = 3. 6v gain = 2 6 db input and output matched to 50? supports wide voltage supply range 3v to 5v applications cellular handsets mobile devices tablets consumer electronics gaming netbooks/notebooks tv/monitors/video RFFM8209
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 2 of 10 r ffm8209 absolute maximum rat ings parameter rating unit dc supply voltage (no rf applied) 6 v pa enable voltage - 0.5 to 5 v dc dc supply current 500 ma operating ambient temperature (ta) - 40 to +85 oc storage temperature - 40 to +150 oc maximum tx input power into 50? load (no damage) +12 dbm maximum rx input power (no damage) +12 dbm moisture sensitivity msl2 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent dama ge to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max compliance 802.11b, 802.11g, 802.11n, 802.11ac operating frequency 2.412 2.484 ghz operating temperature - 40 85 oc power supply v cc 3.3 3.6 4. 2 v extended v cc 3 5 control voltage - high 2.8 3.1 v cc v pa_en , crx, cbt, lna_en control voltage - low 0 0.2 v transmit (tx - ant) t emp = 25 oc, v cc = 3. 6 v, 50% duty cycle unless otherwise noted 11ac output power 17.5 18 .0 dbm ht20 / ht40 15.5 16.0 dbm t emp = - 10oc to 70oc, v cc = 3.3 v to 4.2v 11ac dynamic evm 1.5 1.8 % at rated power; ht20 / ht40 ; 256qam - 36.5 - 3 5.0 db 11n output power 1 9 .5 20 dbm ht20 / ht40 17.5 18 t emp = - 10oc to 70oc, v cc = 3. 3 v to 4.2v 11n dynamic evm 2.5 3 % at rated power; ht20 / ht40 ; 64qam - 3 2.0 - 30.5 db spectral mask 20 2 2 dbm mcs0; ht20 / ht40 tx port return loss 10 13 db ant port return loss 9.6 12 db large signal gain 23.5 26 30 db 22.5 26 31 db t = - 10oc, to +70oc, v cc = 3. 3 v to 4. 2 gain flatness - 20mhz channel - 0.25 0 0.25 db gain flatness - across band - 1 0 1 db operating current 2 2 5 ma p out = 1 5.5 dbm 2 4 5 ma p out = 18 dbm 2 65 ma p out = 20 dbm quiescent current 210 ma pa_en current 55 80 a
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 3 of 10 r ffm8209 parameter specification unit condition min typ max transmit (tx - ant) (continued) t emp = 25 oc, v cc = 3. 6 v, 50% duty cycle unless otherwise noted second harmonic - 10 - 5 dbm /mhz p out = 2 2 dbm, t = - 10oc to 70oc, v cc = 3. 3 v to 4.2v,measured with a standard ieee802.11b, 1mbps waveform third harmonic - 44 - 35 dbm /mhz power detector voltage 0 0.05 0.1 v p out = 0dbm (no rf) 0. 3 5 0.4 0. 4 5 v p out = 18.0dbm (see evaluation board schematic) 0.5 0.6 0.7 v p out = 22dbm (see evaluation board schematic) variation from 0 - 360 load pull - 1.5 1.5 db 3:1 vswr ant - rx isolation 30 32 35 db fem is operating in tx mode receive (ant - rx) - lna on t emp = 25 oc, v cc = 3. 6 v, 50% duty cycle unless otherwise noted gain (s21) 9 11 13 db 8 11 14 db t emp = - 10oc to 70oc, v cc = 3. 3 v to 4.2v rx gain flatness over any 20mhz bw - 0.25 0.25 db gain flatness across band - 1 1 db noise figure 2.5 3 db 2.5 3.7 db t emp = - 10oc to 70oc, v cc = 3. 3 v to 4.2v rx port return loss 12 17 db ant port return loss 3 4 db current consumption 7.5 12 ma 12 18 ma t emp = - 10oc to 70oc, v cc = 3. 3 v to 4.2v lna_en control current 35 0 500 a lna turn on time 200 500 ns receive (ant - rx) - bypass mode t emp = 25 oc, v cc = 3. 6 v, 50% duty cycle unless otherwise noted insertion loss 6 7 db 4 6 8 db t = - 10oc to 70oc, v cc = 3. 3 v to 4.2v rx port return loss 10 14 db ant port return loss 10 12 db input p1db 2 2 27 dbm bluetooth tx/rx t emp = 25 oc, v cc = 3. 6 v, 50% duty cycle unless otherwise noted insertion loss 0.8 1.2 db nominal input p1db 2 4 28 dbm bt port return loss 10 16 db ant port return loss 10 17 db general specifications leakage current 0.5 10 a v cc = 4.8v, rf off, all control lines floating switch control current - high - each line 5 100 a switch control current - low - each line 0.5 5 a switching speed 100 4 00 ns esd - human body model 1000 v esd - charge device model 1000 v pa +tx switch turn - on time 200 500 ns 10% to 90%
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 4 of 10 r ffm8209 parameter specification unit condition min typ max general specification ( continued ) maximum input power 12 dbm into 50 ? , v cc = 3.6 v, 25c 12 dbm 6:1 vswr, v cc = 3. 6 v, 25c 5 dbm 10:1 vswr, v cc = 3. 6 v, 25c pa stability 4 :1 vswr no harmonically related spurious above - 41.25dbm/mhz ruggedness 10:1 vswr at typical operating conditions transmit (tx - ant) ? 5v t emp = 25 oc, v cc = 5 v, 50% duty cycle unless otherwise noted 11ac output power 1 9 .5 20 dbm ht20 / ht40 11ac dynamic evm 1.5 1.8 % at rated power; ht20 / ht40; 256qam - 36.5 - 3 5.0 db 11n output power 20 .5 21 dbm ht20 / ht40 11n dynamic evm 2.5 3 % at rated power; ht20 / ht40; 64qam - 3 2.0 - 30.5 db spectral mask 22 dbm mcs0; ht20 / ht40 operating current 295 ma p out =20dbm 3 15 ma p out = 21dbm quiescent current 255 ma no rf signal large signal gain 23.5 26 30 .0 db switch control logic table operating mode pa_en lna_en c_rx c_bt standby low low low low 802.11b/g/n/ac tx high power high low low low 802.11b/g/n/ac rx gain low high high low 802.11b/g/n/ac rx bypass low low high low bt rx/tx low low low high notes: ? pa_en and tx switch control are tied together internally. ? high = 2.8 to v cc . low = 0v to 0.2v.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 5 of 10 r ffm8209 timing diagram level is set per the data sheet bt is low during tx and rx vcc pa_en c_rx c_bt 0.2usec time tx rf signal transmit timing diagram power on / off sequence rx is low during tx 0.2 usec 0.2 usec 0.2 usec bt must be ?low? during tx and rx modes. apply a max of 0.4 to pin-13. apply vcc to pins 3,4, and 10 both controls must be off during transmit. the order is not critical. apply a max of 0.4v to pins 9, and 14 for transmit: apply 3.1v to pin-6 note1: rf signal for each specific mode is applied after the dc bias is applied note2: total on/off time includes from 10% of control switching to 90% of rf power note3: listed values on diagram are typical. the maximum is 0.5us for each mode lna_en rx is low during tx rf signal on time is 0.5us max. set rf input to required level.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 6 of 10 r ffm8209 timing sequence notes: 802.11a/n/ac transmit biasing instructions 1. connect the fem to a signal generator at the input and a spectrum analyzer at the output. terminate unused ports with 50 ohms 2. set the power supply voltage to 3.6v first with pa_en < 0.4v. leakage current should be <10ua. 3. refer to switch operational truth table to set the control lines at the proper levels for tx high power. all off voltages must be < 0.2v (cannot be floating.) 4. turn on pa_en with levels indicated in the datasheet. pa_en controls the current drawn by the 802.11a/n/ac power amplifier and the current should quickly rise to ~200ma (or 255ma @ 5v) +/ - 20ma for a typical part but the actual operating current will be based on the output power desired. 802.11a/n/ac transmit turn on sequence (see transmit timing diagram) 1. turn on power supply. 2. turn on pa_en. 3. apply rf. 802.11a/n/ac transmit turn off sequence 1. turn off rf. 2. turn off pa_ en. 3. turn off power supply. 802.11a/n/ac receive 1. to receive wifi set the switch control lines per the truth table. 2. antenna port is input and rx port is output for this test. 3. follow timing diagram for biasing instructions.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 7 of 10 r ffm8209 evaluation board schematic pdet c_rx bt vcc lna_en c_bt vcc tx rx pa_en c3 0.1uf ant 6 8 13 7 12 14 15 16 1 2 3 4 5 11 10 9 c8 0.1uf r2 0 c2 4.7uf l1 1nh c5 10pf c4 10pf r1 680 note: ? based on the rfmd evaluation board, l1 in the above schematic gives best performance. depending on the end application layou t, l1 may not be required. ? depending on the end application layout, we recommend keeping the placement of r1.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 8 of 10 r ffm8209 p in out tx pa_en gnd vcc ant bt gnd gnd rx 6 8 lna_en vcc gnd 13 c_bt 7 12 14 15 16 1 2 3 4 5 11 10 9 vcc pdet c_rx package drawin g
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 9 of 10 r ffm8209 pcb patterns notes: 1. thermal vias for center slug ?c? should be incorporated into the pcb design. the number and size of thermal vias will depend on the application, power, dissipation and electrical requirements. example of the number and size of vias can be found on the rfmd evaluation board la yout (gerber files are available upon request)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1404 21 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 10 of 10 r ffm8209 pin names and descriptions pin name description 1 rx rf output port for the 802.11b/ g/n lna. port is matched to 50 ? . this pin is dc blocked internally. 2 gnd this pin is not connected internally and can be left floating or connected to ground. 3 pa_en bias voltage for the pa. this is a high impedance pin and it also controls the tx switch of the sp3t. see truth table for proper settings. 4 tx rf input port for the 802.11b/ g/n pa. input is matched to 50 ? . this pin is dc blocked internally. 5 vcc supply voltage for the first stage of the pa. see applications schematic for biasing and bypassing components. 6 vcc supply voltage for the output stage of the pa. see applications schematic for biasing and bypassing components. 7 gnd this pin is not connected internally and can be left floating or connected to ground. 8 pdet power detector voltage for the tx path. may need external series r/shunt c to adjust voltage level and to filter rf noise. 9 ant rf bidirectional antenna port matched to 50?. an external dc block is required. 10 gnd this pin is not connected internally and can be left floating or connected to ground. 11 c_rx receive switch control pin. see switch truth table for proper level. 12 c_bt bluetooth? switch control pin. see switch truth table for proper level. 13 gnd this pin is not connected internally and can be left floating or connected to ground. 14 bt rf bidirectional port for blue tooth?. input is matched to 50 ? . an external dc block is required. 15 v cc supply voltage for the lna. see applications schematic for biasing and bypassing components. 16 lna_en control voltage for the lna. see applications schematic for biasing and bypassing components. pkg base gnd ground connection. the backside of the package should be connected to the ground plane through a short path, i.e., pcb vias under the device are recommended.
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